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Author(s):   Loh, S.K.; Jasinski, J.M.
Title:   Direct kinetic studies of SiH3 + SiH3, H, CCl4, SiD4, Si2H6, and C3H6 by tunable infrared diode laser spectroscopy
Journal:   J. Chem. Phys.
Volume:   95
Page(s):   4914 - 4926
Year:   1991
Reference type:   Journal article
Squib:   1991LOH/JAS4914-4926

Reaction:   CCl4 + SiH3·CCl3 + SiH3Cl
Reaction order:   2
Temperature:   298 K
Pressure:  1.27E-2 bar
Rate expression:   5.0x10-14 [±1.99x10-14 cm3/molecule s]
Rate constant is an upper limit.
Bath gas:   He
Category:  Experiment
Data type:   Absolute value measured directly
Excitation technique:   Flash photolysis (laser or conventional)
Analytical technique:   IR absorption

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