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Author(s):   Plumb, I.C.; Ryan, K.R.
Title:   A model of the chemical processes occurring in CF4/O2 discharges used in plasma etching
Journal:   Plasma Chem. Plasma Process.
Volume:   6
Year:   1986
Reference type:   Journal article
Squib:   1986PLU/RYA205

Reaction:   ·CF3 + O2CF3O2
Reaction order:   2
Temperature:   295 K
Pressure:  6.67E-4 bar
Rate expression:   8.0x10-12 [cm3/molecule s]
Bath gas:   CF4
Category:  Theory
Data type:   Other theoretical

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