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Author(s):   Korkin, A.A.; Cole, J.V.; Sengupta, D.; Adams, J.B.
Title:   On the Mechanism of Silicon Nitride Chemical Vapor Deposition From Dichlorosilane and Ammonia
Journal:   J. Electrochem. Soc.
Volume:   146
Page(s):   4203 - 4212
Year:   1999
Reference type:   Journal article
Squib:   1999KOR/COL4203-4212

Reaction:   SiHCl2NH2NH3 + SiCl2
Reaction order:   1
Temperature:   973 K
Pressure:  6.67E-2 bar
Rate expression:   2.0x1013 [s-1] e-274000 [J/mole]/RT
Category:  Theory
Data type:   Transition state theory
Comments:   k= 3.98e-2 s-1 (TST) at 700?.

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