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Title: On the Mechanism of Silicon Nitride Chemical Vapor Deposition From Dichlorosilane and Ammonia
Journal: J. Electrochem. Soc.
Volume: 146
Page(s): 4203 - 4212
Year: 1999
Reference type: Journal article
Squib: 1999KOR/COL4203-4212
Reaction:
SiH2Cl2 + SiCl2 → Cl(H)2SiSiCl3
Reaction order:
2
Temperature:
973
K
Pressure: 6.67E-2 bar
Rate expression:
1.32x10-14 [cm3/molecule s] e-79500 [J/mole]/RT
Category: Theory
Data type:
Transition state theory
Comments:
k=3.98e5 cc/mole.s(TST) at 700?.
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