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Author(s):   Kunz, A.; Roth, P.
Title:   High-Temperature Kinetics of Some Si- and Cl-Containing Ceramic Precursors
Journal:   Int J. Chem. Kinet.
Volume:   33
Page(s):   741 - 754
Year:   2001
Reference type:   Journal article
Squib:   2001KUN/ROT741-754

Reaction:   SiCl4 + ·ClCl2 + SiCl3
Reaction order:   2
Temperature:   1000 - 2040 K
Pressure:  1.40 - 1.80 bar
Rate expression:   1.66x10-14 [cm3/molecule s]
Rate constant is an upper limit.
Bath gas:   Ar
Category:  Experiment
Data type:   Derived from fitting to a complex mechanism
Pressure dependence:   Rate constant is pressure dependent
Experimental procedure:   Shock tube
Excitation technique:   Flash photolysis (laser or conventional)
Time resolution:   In real time
Analytical technique:   Vis-UV absorption
Comments:   Cl from 193 nm excimer photolysis of SiCl4. ARAS Atomic resonance absorption spectroscopy detect H, Cl, Si. Model kinetics to get rate constants.

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