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Accessibility information
Author(s):   Plumb, I.C.; Ryan, K.R.
Title:   A model of the chemical processes occurring in CF4/O2 discharges used in plasma etching
Journal:   Plasma Chem. Plasma Process.
Volume:   6
Page(s):  
Year:   1986
Reference type:   Journal article
Squib:   1986PLU/RYA205

Associated entries:

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Rate expression:  k(T) = A (T/298 K)n e-Ea/RT
Rate expression units:
First order:  s-1
Second order:  cm3/molecule s
Third order:  cm6/molecule2 s
R = 8.314472 J / mole K
Energy Units J   Molecular Units Molecule
Pressure Units bar   Temperature Units K
Base Volume Unit cm   Reference Temperature 298.0
Evaluation Temperature 298.0

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| |
Plot   Squib   Reaction   Temp [K]   A   n   Ea [J/mole]   k(298.00 K)   Order
  1986PLU/RYA205   CO + ·FFCO  295   9.40E-11              2
  1986PLU/RYA205   CO + ·FFCO  295   8.11E-32              3
  1986PLU/RYA205   FCO + ·FCOF2  295   1.40E-11              2
  1986PLU/RYA205   FCO + ·FCOF2  295   6.51E-29              3
  1986PLU/RYA205   ·CF2 + ·CF3C2F5  295   1.00E-12              2
  1986PLU/RYA205   ·CF2 + ·CF3C2F5  295   2.30E-26              3
  1986PLU/RYA205   ·CF2 + ·F·CF3  295   1.30E-11              2
  1986PLU/RYA205   ·CF2 + ·F·CF3  295   3.20E-31              3
  1986PLU/RYA205   ·CF3 + ·CF3C2F6  295   8.30E-12              2
  1986PLU/RYA205   ·CF3 + ·CF3C2F6  295   2.81E-23              3
  1986PLU/RYA205   ·CF3 + O2CF3O2  295   8.00E-12              2
  1986PLU/RYA205   ·CF3 + O2CF3O2  295   3.50E-29              3
  1986PLU/RYA205   ·CF3 + ·FCF4  295   2.01E-11              2
  1986PLU/RYA205   ·CF3 + ·FCF4  295   7.69E-27              3
  1986PLU/RYA205   CF + ·F·CF2  295   1.00E-11              2
  1986PLU/RYA205   CF + ·F·CF2  295   3.20E-31              3
  1986PLU/RYA205   O2 + ·FO2F  295   3.01E-11              2
  1986PLU/RYA205   O2 + ·FO2F  295   1.60E-31              3

Search returned 18 records.