Kinetics Database Logo

Kinetics Database Resources

Simple Reaction Search

Search Reaction Database

Search Bibliographic Database

Set Unit Preferences


Rate Our Products and Services


Other Databases

NIST Standard Reference Data Program

NIST Chemistry Web Book

NDRL-NIST Solution Kinetics Database

NIST Computational Chemistry Comparison and Benchmark Database

The NIST Reference on Constants, Units, and Uncertainty


Administrative Links

NIST home page

MML home page

Chemical Sciences Division

  NIST Logo Home
©NIST, 2020
Accessibility information
Author(s):   Sefcik, M.D.; Ring, M.A.
Title:   Relative insertion rates of silylene and evidence for silylsilylene insertion into silicon-hydrogen and silicon-silicon bonds
Journal:   J. Am. Chem. Soc.
Volume:   95
Page(s):   5168 - 5173
Year:   1973
Reference type:   Journal article
Squib:   1973SEF/RIN5168-5173

Reaction:   CH3GeH3 + SiH2 → CH3GeH2SiH3
Reaction order:   2
Reference reaction:   Si2H6 + SiH2Si3H8
Reference reaction order:   2
Temperature:   623 K
Rate expression:   2.0x10-1±5.0x10-2
Bath gas:   He
Category:  Experiment
Data type:   Relative rate value measured
Excitation technique:   Thermal
Analytical technique:   Gas chromatography

View full bibliographic record.