Kinetics Database Logo

Kinetics Database Resources

Simple Reaction Search

Search Reaction Database

Search Bibliographic Database

Set Unit Preferences

Feedback

Rate Our Products and Services

Help


Other Databases

NIST Standard Reference Data Program

NIST Chemistry Web Book

NDRL-NIST Solution Kinetics Database

NIST Computational Chemistry Comparison and Benchmark Database

The NIST Reference on Constants, Units, and Uncertainty

More...


Administrative Links

NIST home page

MML home page

Chemical Sciences Division

  NIST Logo Home
©NIST, 2013
Accessibility information
Author(s):   Nemoto, M.; Suzuki, A.; Nakamura, H.; Shibuya, K.; Obi, K.
Title:   Electronic quenching and chemical reactions of SiH radicals in the gas phase
Journal:   Chem. Phys. Lett.
Volume:   162
Page(s):   467 - 471
Year:   1989
Reference type:   Journal article
Squib:   1989NEM/SUZ467-471

Associated entries:

Search Results


Rate expression:  k(T) = A (T/298 K)n e-Ea/RT
Rate expression units:
First order:  s-1
Second order:  cm3/molecule s
Third order:  cm6/molecule2 s
R = 8.314472 J / mole K
Energy Units J   Molecular Units Molecule
Pressure Units bar   Temperature Units K
Base Volume Unit cm   Reference Temperature 298.0
Evaluation Temperature 298.0

Use the Plot checkboxes to select data for plotting. Plot selected data using the "Create Plot" button. Click the squib to see extra information about a particular rate constant. Additional help is available.

| |
Plot   Squib   Reaction   Temp [K]   A   n   Ea [J/mole]   k(298.00 K)   Order
  1989NEM/SUZ467-471   Phenylsilane + SiH → Products  298   3.01E-10           3.01E-10  2
  1989NEM/SUZ467-471   O2 + SiH → Products  298   1.69E-10           1.69E-10  2
  1989NEM/SUZ467-471   SiH4 + SiH → Products  298   2.81E-10           2.81E-10  2
  1989NEM/SUZ467-471   NO + SiHSiO + NH  298   2.51E-10           2.51E-10  2

Search returned 4 records.