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Author(s):   Nemoto, M.; Suzuki, A.; Nakamura, H.; Shibuya, K.; Obi, K.
Title:   Electronic quenching and chemical reactions of SiH radicals in the gas phase
Journal:   Chem. Phys. Lett.
Volume:   162
Page(s):   467 - 471
Year:   1989
Reference type:   Journal article
Squib:   1989NEM/SUZ467-471

Associated entries:

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Rate expression:  k(T) = A (T/298 K)n e-Ea/RT
Rate expression units:
First order:  s-1
Second order:  cm3/molecule s
Third order:  cm6/molecule2 s
R = 8.314472 J / mole K
Energy Units J   Molecular Units Molecule
Pressure Units bar   Temperature Units K
Base Volume Unit cm   Reference Temperature 298.0
Evaluation Temperature 298.0

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Plot   Squib   Reaction   Temp [K]   A   n   Ea [J/mole]   k(298.00 K)   Order
  1989NEM/SUZ467-471   Phenylsilane + SiH → Products  298   3.01E-10           3.01E-10  2
  1989NEM/SUZ467-471   O2 + SiH → Products  298   1.69E-10           1.69E-10  2
  1989NEM/SUZ467-471   SiH4 + SiH → Products  298   2.81E-10           2.81E-10  2
  1989NEM/SUZ467-471   NO + SiHSiO + NH  298   2.51E-10           2.51E-10  2

Search returned 4 records.