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Author(s):   Loh, S.K.; Jasinski, J.M.
Title:   Direct kinetic studies of SiH3 + SiH3, H, CCl4, SiD4, Si2H6, and C3H6 by tunable infrared diode laser spectroscopy
Journal:   J. Chem. Phys.
Volume:   95
Page(s):   4914 - 4926
Year:   1991
Reference type:   Journal article
Squib:   1991LOH/JAS4914-4926

Associated entries:

Search Results


Rate expression:  k(T) = A (T/298 K)n e-Ea/RT
Rate expression units:
First order:  s-1
Second order:  cm3/molecule s
Third order:  cm6/molecule2 s
R = 8.314472 J / mole K
Energy Units J   Molecular Units Molecule
Pressure Units bar   Temperature Units K
Base Volume Unit cm   Reference Temperature 298.0
Evaluation Temperature 298.0

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| |
Plot   Squib   Reaction   Temp [K]   A   n   Ea [J/mole]   k(298.00 K)   Order
  1991LOH/JAS4914-4926   CCl4 + SiH3·CCl3 + SiH3Cl  298   <5.00E-14           5.00E-14  2
  1991LOH/JAS4914-4926   CH3CH=CH2 + SiH3 → Products  298   <1.50E-14           1.50E-14  2
  1991LOH/JAS4914-4926   Si2H6 + SiH3SiH4 + Si2H5  298   <7.01E-15           7.01E-15  2
  1991LOH/JAS4914-4926   SiH4 + H2 + SiH3  298   2.51E-13           2.51E-13  2
  1991LOH/JAS4914-4926   + SiH3 → Products  298   2.01E-11           2.01E-11  2
  1991LOH/JAS4914-4926   SiD4 + SiH3 → SiH3D + SiD3  298   <4.00E-14           4.00E-14  2
  1991LOH/JAS4914-4926   SiH3 + SiH3Si2H6  298   7.89E-11           7.89E-11  2

Search returned 7 records.